| PART |
Description |
Maker |
| W964B6BBN80I W964B6BBN W964B6BBN70 W964B6BBN70E W9 |
Low Power Mobile Products
1M WORD X 16BIT LOW POWER PSEUDO SRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC
Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| K6F4016U4EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016V6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| AK535505 AKD5355 |
Low Power 16bit ツヒ ADC
|
Asahi Kasei Microsystems
|
| CS5506-BSZ CS5508-BSZ |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS
|
Cirrus Logic, Inc.
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| KM416V4100C KM416V4000C KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER
From old datasheet system
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|
